IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package.
This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
Summary of Features
Ultra-fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge
Low output charge
Kelvin source connection
Benefits
2x reduced component count vs. discrete
Reduced cost
Reduced weight
Reduced system complexity
IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package.
This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
Summary of Features
- Ultra-fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge
- Low output charge
- Kelvin source connection
Benefits
- 2x reduced component count vs. discrete
- Reduced cost
- Reduced weight
- Reduced system complexity
