IGI65D1414A3MS is a dual 650 V enhancement-mode GaN half-bridge transistor with 140 mΩ on-resistance per switch, packaged in a 6 x 8 mm QFN-32. It features Kelvin source connections for both high- and low-side switches, supports reverse conduction, and has no reverse-recovery charge. The device operates with a junction temperature range of -55°C to 150°C, has a thermal resistance junction-to-case of 2.3 °C/W, and is rated for 13.7 A continuous drain current at 25°C case temperature. It meets JEDEC standards and is designed for high-density AC/DC chargers, adapters, and low-power motor drives.
IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package.
This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
Summary of Features
Benefits
| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGI65D1414A3MS |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGI65D1414A3MS |
| Package Type | PG-TIQFN-32 |
