IGI60L1111B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
Summary of Features
Integrated level shift gate driver
Integrated bootstrap diode
PWM input compatible
Wide VDD range (10 to 24 V)
Turn-ON & OFF dv/dt slew rate control
Zero Qrr
Benefits Compared to a discrete solution:
4x reduction in components count
2x reduction of footprint on a PCB On a system level:
Reduced cost
Reduced weight
Reduced complexity
Applications
Adapters and chargers
Mixer - variable speed DC and SRM motors
IGI60L1111B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
Summary of Features
- Integrated level shift gate driver
- Integrated bootstrap diode
- PWM input compatible
- Wide VDD range (10 to 24 V)
- Turn-ON & OFF dv/dt slew rate control
- Zero Qrr
Benefits
Compared to a discrete solution:
- 4x reduction in components count
- 2x reduction of footprint on a PCB
On a system level:
- Reduced cost
- Reduced weight
- Reduced complexity
Applications
- Adapters and chargers
- Mixer - variable speed DC and SRM motors
