CoolGaN™ Transistor 200 V G3 in PQFN 3x5, 6.7 mΩ
The IGC090S20S1 is a 200 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Summary of Features
200 V e-mode power transistor
Dual-side cooled package
No reverse recovery charge
Reverse conduction capability
Low gate charge, low output charge
Qualfied according to JEDEC
Benefits
Best-in-class power density
Highest efficiency
Improved thermal management
Enabling smaller and lighter designs
Excellent reliability
Lowering BOM cost
Applications
DC-DC power conversion for telecom infrastructure
Low power BDC/BLDC motor drives up to 72 V
USB-C adapters and chargers
CoolGaN™ Transistor 200 V G3 in PQFN 3x5, 6.7 mΩ
The IGC090S20S1 is a 200 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Summary of Features
- 200 V e-mode power transistor
- Dual-side cooled package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- Qualfied according to JEDEC
Benefits
- Best-in-class power density
- Highest efficiency
- Improved thermal management
- Enabling smaller and lighter designs
- Excellent reliability
- Lowering BOM cost
Applications
- DC-DC power conversion for telecom infrastructure
- Low power BDC/BLDC motor drives up to 72 V
- USB-C adapters and chargers
