The 54W8374 is a 64-Kbit (8 K vó 8) ferroelectric random access memory (F-RAM) device, designed for high endurance and nonvolatile data retention. It features a read/write endurance of up to 100 trillion cycles and offers data retention for over 151 years. The device operates with a wide voltage range of 2.7 V to 5.5 V and has a maximum active current of 12 mA, with a typical standby current of 20 ¬µA. This F-RAM is compatible with standard SRAM and EEPROM pinouts, making it suitable for drop-in replacements in existing designs. It has a fast access time of 70 ns and a cycle time of 130 ns, which enhances its performance in applications requiring frequent writes. The device is housed in a 28-pin small outline integrated circuit (SOIC) package and is compliant with RoHS standards, ensuring it meets environmental regulations. The operational temperature range is specified from ,Äì40 ¬8C to +85 ¬8C, making it suitable for industrial applications. The F-RAM's monolithic reliability eliminates concerns associated with battery-backed SRAM, such as battery life and maintenance. Overall, the 54W8374 is a robust memory solution for applications that demand high reliability and performance.
IC FRAM 64KBIT PARALLEL 28SOIC
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) Parallel 28-SOIC
IC FRAM 64KBIT PARALLEL 28SOIC Product overview: FM16W08-SG from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-FM16W08-SG can be used for catalog matching and distributor lookup.
FRAM (Ferroelectric RAM) Memory IC 64Kbit Parallel 28-SOIC
TUBE / F-RAM MEMORY PARALLEL ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | FM16W08-SG | 448-FM16W08-SG-ND | 774-FM16W08-SG | FM16W08-SG | 54W8374 |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory | Tube / F-Ram Memory Parallel Rohs Compliant Cypress Infineon Technologies |
| Memory Category | FRAM; FRAM (Ferroelectric RAM) | NVRAM; FRAM | FRAM | FRAM; FRAM | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 64 kbits | 64 kbits | 64 kbits | ||
| Package Type | SOIC; 28-SOIC (0.295", 7.50mm Width) | SOIC; "28-SOIC (0.295"", 7.50mm Width)" | SOIC; 28-SOIC (0.295\", 7.50mm Width) | ||
| Supply Voltage | 2.7V ~ 5.5V | 2.7V ~ 5.5V | -3.3V; 2.7 | 2.7V ~ 5.5V |
