The EVAL-2ED2106 comes with the gate driver IC, 2ED2106S06F and two MOSFETs, IPD60R360P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI)gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.
Summary of Features
Operating voltages up to + 650 V
Using Infineon SOI-technology
Negative VS transient immunity of 100 V
Integrated low ohmic bootstrap diode
Designed for bootstrap operation
Maximum supply voltage of 25 V
Under voltage lockout (UVLO)
200 ns propagation delay
Logic operational up to –11 V on VS Pin
Benefits
Reduced BOM cost & saves space
50% lower level-shift losses
Excellent ruggedness & noise immunity
Applications
Home appliances
Motor Control
Power conversion
The EVAL-2ED2106 comes with the gate driver IC, 2ED2106S06F and two MOSFETs, IPD60R360P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI)gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.
Summary of Features
- Operating voltages up to + 650 V
- Using Infineon SOI-technology
- Negative VS transient immunity of 100 V
- Integrated low ohmic bootstrap diode
- Designed for bootstrap operation
- Maximum supply voltage of 25 V
- Under voltage lockout (UVLO)
- 200 ns propagation delay
- Logic operational up to –11 V on VS Pin
Benefits
- Reduced BOM cost & saves space
- 50% lower level-shift losses
- Excellent ruggedness & noise immunity
Applications
- Home appliances
- Motor Control
- Power conversion
