200 W HB-LLC 500 kHz evalulation board with 2ED2101S 650 V HS+LS driver and 2ED24427N 24 V low side driver
The EVAL-2ED2101-HB-LLC features the 2ED2101S06F SOI level-shift gate driver for driving the primary-side half bridge and the dual-channel low-side gate driver 2ED24427N01F with pulse transformer to ensure control signal isolation for the secondary rectifying stage. Also, the 2ED24427N01F is used to drive the synchronous rectification output stage. It includes all of the required elements for an LLC converter, such as the high performance resonant controller ICE2HS01G, IPL60R650P6S 600 V CoolMOS™ P6 transistors, and BSC022N04LS6 OptiMOS™ switches. This evaluation board demonstrates our thin-film SOI technology and advanced control for HB-LLC converter with synchronous rectification at the secondary side. For a flexible input DC voltage between 360- 425 V, it provides a 12 V output voltage with maximum currents up to 16.7 A. This topology can be used in many DC-DC applications, such as high-power lighting power stages, SMPS, UPS, server supplies, power bricks for consumer electronics, or for low power EV-charging applications (E-Bikes).
It is designed to showcase the use of high switching frequencies up to 500 kHz, with light load bursts above 600kHz, in an LLC converter design, to provide system benefits such as lower EMI, reduced passive component size and footprint, as well as overall system size and BOM cost
Summary of Features
650 V HB-LLC direct drive topology eliminates cost / space of high side drive pulse transformer
500 kHz switching reduces cost / size of resonant components
Transformer integrates resonant inductance for further cost / size savings
Key Features of 2ED2101S06F
650 V High and Low Side SOI gate driver
-100 V / 300 ns negative VS transient voltage immunity
Integrated ultra-fast, low RON bootstrap diode
500 kHz typical switching frequency capability
10 ns maximum propagation delay matching
Key Features of 2ED24427N01F
24 V dual channel low side driver with Enable
Typical +/-10 A, Maximum +17 A / -11 A source / sink
Low output stage resistance with 55 ns propagation delay
PSOIC-8 power package with thermal ground
Benefits
Complete Infineon P2S solution with Auxiliary power and LLC Analog converter board
650 V Direct drive HB-LLC topology eliminates cost and space of pulse transformer to drive high side switch
500 kHz switching frequency reduces size and cost of resonant components
resonant inductance integrated into transformer to further reduce system cost and size
complete Infineon HB-LL ZeroVoltageSwitching P2S solution includes :
Power stage design with 2ED2101S01F HS+LS 650 V SOI gate driver
Power switching stage with IPL60R650P6S - Primary HV 600 V CoolMOS™ P6 MOSFETs
Synchronous rectification stage with 2ED24427N01F dual low side driver and
SyncRec power stage with BSC022N04LS rectification OptiMOS™ MOSFETs
ICE2HS01G - LLC Analog Controller Board or own microcontroller
ICE5QSAG flyback controller
200 W HB-LLC 500 kHz evalulation board with 2ED2101S 650 V HS+LS driver and 2ED24427N 24 V low side driver
The EVAL-2ED2101-HB-LLC features the 2ED2101S06F SOI level-shift gate driver for driving the primary-side half bridge and the dual-channel low-side gate driver 2ED24427N01F with pulse transformer to ensure control signal isolation for the secondary rectifying stage. Also, the 2ED24427N01F is used to drive the synchronous rectification output stage. It includes all of the required elements for an LLC converter, such as the high performance resonant controller ICE2HS01G, IPL60R650P6S 600 V CoolMOS™ P6 transistors, and BSC022N04LS6 OptiMOS™ switches.
This evaluation board demonstrates our thin-film SOI technology and advanced control for HB-LLC converter with synchronous rectification at the secondary side. For a flexible input DC voltage between 360- 425 V, it provides a 12 V output voltage with maximum currents up to 16.7 A. This topology can be used in many DC-DC applications, such as high-power lighting power stages, SMPS, UPS, server supplies, power bricks for consumer electronics, or for low power EV-charging applications (E-Bikes).
It is designed to showcase the use of high switching frequencies up to 500 kHz, with light load bursts above 600kHz, in an LLC converter design, to provide system benefits such as lower EMI, reduced passive component size and footprint, as well as overall system size and BOM cost
Summary of Features
- 650 V HB-LLC direct drive topology eliminates cost / space of high side drive pulse transformer
- 500 kHz switching reduces cost / size of resonant components
- Transformer integrates resonant inductance for further cost / size savings
- Key Features of 2ED2101S06F
- 650 V High and Low Side SOI gate driver
- -100 V / 300 ns negative VS transient voltage immunity
- Integrated ultra-fast, low RON bootstrap diode
- 500 kHz typical switching frequency capability
- 10 ns maximum propagation delay matching
- Key Features of 2ED24427N01F
- 24 V dual channel low side driver with Enable
- Typical +/-10 A, Maximum +17 A / -11 A source / sink
- Low output stage resistance with 55 ns propagation delay
- PSOIC-8 power package with thermal ground
Benefits
- Complete Infineon P2S solution with Auxiliary power and LLC Analog converter board
- 650 V Direct drive HB-LLC topology eliminates cost and space of pulse transformer to drive high side switch
- 500 kHz switching frequency reduces size and cost of resonant components
- resonant inductance integrated into transformer to further reduce system cost and size
- complete Infineon HB-LL ZeroVoltageSwitching P2S solution includes :
- Power stage design with 2ED2101S01F HS+LS 650 V SOI gate driver
- Power switching stage with IPL60R650P6S - Primary HV 600 V CoolMOS™ P6 MOSFETs
- Synchronous rectification stage with 2ED24427N01F dual low side driver and
- SyncRec power stage with BSC022N04LS rectification OptiMOS™ MOSFETs
- ICE2HS01G - LLC Analog Controller Board or own microcontroller
- ICE5QSAG flyback controller
