Infineon Technologies AG Evaluation Boards EB 2ED2410 3D 1BCS

This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets. This daughterboard EB 2ED2410 3D 1BCS is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET(1.1 mOhm) in a back2back common source configuration. Following other daughterboards are available: EB 2ED2410 3D 1BCD: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging Summary of Features Suitable for 12 and 24 V board nets Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M) 0,5 mOhm shunt resistor 60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets MOSFET temperature monitoring with NTC resistors Nominal current up to 20 A continuous or 30 A for 10 min