Infineon Technologies AG Memory CY7C1346H-166AXCT

Description
SRAM - Synchronous, SDR Memory IC 2Mb (64K x 36) Parallel 166MHz 3.5ns 100-TQFP (14x20)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 2Mb (64K x 36) Parallel 166MHz 3.5ns 100-TQFP (14x20)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1346H-166AXCT-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 2Mb (64K x 36) Parallel 166MHz 3.5ns 100-TQFP (14x20)

SRAM - Synchronous, SDR Memory IC 2Mb (64K x 36) Parallel 166MHz 3.5ns 100-TQFP (14x20)

Buy Now Datasheet
IC SRAM 2MBIT PARALLEL 100TQFP

IC SRAM 2MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - CY7C1346H-166AXCT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 2Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x20)

SRAM - Synchronous, SDR Memory IC 2Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x20)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number CY7C1346H-166AXCT-ND CY7C1346H-166AXCT CY7C1346H-166AXCT
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 2000 kbits 2000 kbits 2000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28232478 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 71V124SA15YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details