Infineon Technologies AG Memory CY14B104NA-BA45XI

Description
NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 45ns 48-FBGA (6x10)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 45ns 48-FBGA (6x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY14B104NA-BA45XI-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 45ns 48-FBGA (6x10)

NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 45ns 48-FBGA (6x10)

Buy Now Datasheet
Memory IC and Storage Component - 774-CY14B104NA-BA45XI - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-CY14B104NA-BA45XI
Memory IC and Storage Component 774-CY14B104NA-BA45XI
IC NVSRAM 4MBIT PARALLEL 48FBGA Product overview: CY14B104NA-BA45XI from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CY14B104NA-BA45X I can be used for catalog matching and distributor lookup.

IC NVSRAM 4MBIT PARALLEL 48FBGA Product overview: CY14B104NA-BA45XI from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CY14B104NA-BA45XI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - CY14B104NA-BA45XI - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM, 256KX16, 45ns, CMOS, PBGA48

Non-Volatile SRAM, 256KX16, 45ns, CMOS, PBGA48

Supplier's Site Datasheet
Memory - CY14B104NA-BA45XI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 45 ns 48-FBGA (6x10)

NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 45 ns 48-FBGA (6x10)

Buy Now Datasheet
Nv Sram, 256K X 16Bit, 45Ns, Fbga-48; Memory Size Cypress Infineon Technologies - 30AC9485 - Newark, An Avnet Company
Chicago, IL, United States
Nv Sram, 256K X 16Bit, 45Ns, Fbga-48; Memory Size Cypress Infineon Technologies
30AC9485
Nv Sram, 256K X 16Bit, 45Ns, Fbga-48; Memory Size Cypress Infineon Technologies 30AC9485
NV SRAM, 256K X 16BIT, 45NS, FBGA-48; Memory Size:4Mbit; Memory Organisation:256K x 16bit; Read Access Time:45ns; Write Access Time:45ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48Pins; RoHS Compliant: Yes

NV SRAM, 256K X 16BIT, 45NS, FBGA-48; Memory Size:4Mbit; Memory Organisation:256K x 16bit; Read Access Time:45ns; Write Access Time:45ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
IC NVSRAM 4MBIT PARALLEL 48FBGA

IC NVSRAM 4MBIT PARALLEL 48FBGA

Supplier's Site Datasheet
IC NVSRAM 4MBIT PARALLEL 48FBGA

IC NVSRAM 4MBIT PARALLEL 48FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Quarktwin Technology Ltd. Newark, An Avnet Company ODG (Origin Data Global) Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number CY14B104NA-BA45XI-ND 774-CY14B104NA-BA45XI CY14B104NA-BA45XI CY14B104NA-BA45XI 30AC9485 CY14B104NA-BA45XI CY14B104NA-BA45XI
Product Name Memory Memory IC and Storage Component Memory Nv Sram, 256K X 16Bit, 45Ns, Fbga-48; Memory Size Cypress Infineon Technologies Memory Memory
Memory Category NVRAM; NVSRAM NVRAM; NVSRAM; Non-Volatile; SRAM Chip SRAM Chip NVSRAM; NVSRAM; SRAM Chip SRAM Chip NVSRAM (Non-Volatile SRAM); SRAM Chip NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA BGA; Tray BGA; PG-TFBGA-48 BGA; 48-TFBGA FBGA 48-TFBGA
Supply Voltage 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 2.7V ~ 3.6V
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