Infineon Technologies AG Single FETs, MOSFETs BSS138N E7854

BSS138N is an N-channel enhancement mode MOSFET for low-power switching applications, packaged in a PG-SOT-23 surface mount case. It has a continuous drain current of 0.23 A at 25°C and 0.18 A at 70°C, a drain-source breakdown voltage of 60 V, and a maximum on-state resistance of 3.5 Ω at 4.5 V gate-source voltage. The device is rated for gate-source voltage up to ±20 V, power dissipation of 0.36 W at 25°C, and operating temperature from -55°C to 150°C. It meets AEC-Q101 qualification and is RoHS compliant and halogen-free per IEC61249-2-21.