P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Manufacturer: Infineon Technologies
Win Source Part Number: 130325-BSP613PH6327X
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.9A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 875pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 2.9A SOT223-4 Product overview: BSP613PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP613PH6327XTSA
MOSFET P-CH 60V 2.9A SOT223-4
MOSFET Transistor, P Channel, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V RoHS Compliant: Yes
MOSFET TRANSISTOR, P CHANNEL, -2.9 A, -60 V, 0.11 OHM, -10 V, -3 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-Ch -60V -2.9A SOT-223-3
MOSFET P-CH 60V 2.9A SOT223-4
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSP613PH6327XTSA1DKR-ND | 130325-BSP613PH6327XTSA1 | 278-BSP613PH6327XTSA1 | BSP613PH6327XTSA1 | 29X1531 | 108049622 | BSP613PH6327XTSA1 | BSP613PH6327XTSA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP613PH6327XTSA1 | 60V 2.9A MOSFET Transistor | Single FETs, MOSFETs | Mosfet Transistor, P Channel, -2.9 A, -60 V, 0.11 Ohm, -10 V, -3 V Rohs Compliant Infineon | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-261-4, TO-261AA | SOT3; PG-SOT223-4 | Tape & Reel (TR) | TO-261-4, TO-261AA | TO-3 | TO-261-4, TO-261AA | ||
| Transistor Grade / Operating Range | Automotive | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 1800 milliwatts | 1.8 milliwatts | 1800 milliwatts |
