Manufacturer: Infineon Technologies
Win Source Part Number: 114340-BSP372NH6327X
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 218μA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 329pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 1.8A SOT223-4 Product overview: BSP372NH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP372NH6327XTSA
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
MOSFET N-CH 100V 1.8A SOT223-4
MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET N-CH 100V 1.8A SOT223-4
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 114340-BSP372NH6327XTSA1 | 278-BSP372NH6327XTSA1 | BSP372NH6327XTSA1CT-ND | BSP372NH6327XTSA1 | 97Y1261 | BSP372NH6327XTSA1 | BSP372NH6327XTSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372NH6327XTSA1 | 100V 1.8A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| PD | 1800 milliwatts | 1.8 milliwatts | 1800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PG-SOT223-4 | Tape & Reel (TR) | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3 | TO-261-4, TO-261AA |
