Infineon Technologies AG Single FETs, MOSFETs BSP372NH6327XTSA1

Description
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet
Description
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BSP372NH6327XTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP372NH6327XTSA1CT-ND
Single FETs, MOSFETs BSP372NH6327XTSA1CT-ND
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
Single FETs, MOSFETs - BSP372NH6327XTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP372NH6327XTSA1DKR-ND
Single FETs, MOSFETs BSP372NH6327XTSA1DKR-ND
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
Single FETs, MOSFETs - BSP372NH6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP372NH6327XTSA1TR-ND
Single FETs, MOSFETs BSP372NH6327XTSA1TR-ND
N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
Singapore, Singapore
100V 1.8A MOSFET Transistor
278-BSP372NH6327XTSA1
100V 1.8A MOSFET Transistor 278-BSP372NH6327XTSA1
MOSFET N-CH 100V 1.8A SOT223-4 Product overview: BSP372NH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP372NH6327XTSA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.8A SOT223-4 Product overview: BSP372NH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP372NH6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372NH6327XTSA1 - 114340-BSP372NH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372NH6327XTSA1
114340-BSP372NH6327XTSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372NH6327XTSA1 114340-BSP372NH6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 114340-BSP372NH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.8V @ 218μA Max Gate Charge: 14.3nC @ 10V Max Input Capacitance: 329pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 114340-BSP372NH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 218μA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 329pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type Infineon - 97Y1261 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type Infineon
97Y1261
Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type Infineon 97Y1261
MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site
MOSFET SMALL SIGNAL N-CH

MOSFET SMALL SIGNAL N-CH

Buy Now Datasheet
Single FETs, MOSFETs - BSP372NH6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSP372NH6327XTSA1
Single FETs, MOSFETs BSP372NH6327XTSA1
MOSFET N-CH 100V 1.8A SOT223-4

MOSFET N-CH 100V 1.8A SOT223-4

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSP372NH6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSP372NH6327XTSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSP372NH6327XTSA1
MOSFET N-CH 100V 1.8A SOT223-4

MOSFET N-CH 100V 1.8A SOT223-4

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSP372NH6327XTSA1CT-ND 278-BSP372NH6327XTSA1 114340-BSP372NH6327XTSA1 97Y1261 BSP372NH6327XTSA1 BSP372NH6327XTSA1 BSP372NH6327XTSA1
Product Name Single FETs, MOSFETs 100V 1.8A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372NH6327XTSA1 Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type Infineon MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-261-4, TO-261AA Tape & Reel (TR) SOT3; PG-SOT223-4 TO-3 TO-261-4, TO-261AA TO-261-4, TO-261AA
Transistor Grade / Operating Range Automotive
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts 100 volts
Unlock Full Specs
to access all available technical data