Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372 BSP372

Description
Manufacturer: Infineon Technologies Win Source Part Number: 093594-BSP372 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.8V @ 218μA Max Gate Charge: 14.3nC @ 10V Max Input Capacitance: 329pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V Alternative Parts (Cross-Reference): PHT4NQ10LT; MMFT1N10ET3; BSP372 L6327XT; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 093594-BSP372 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.8V @ 218μA Max Gate Charge: 14.3nC @ 10V Max Input Capacitance: 329pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V Alternative Parts (Cross-Reference): PHT4NQ10LT; MMFT1N10ET3; BSP372 L6327XT; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372 - 093594-BSP372 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372
093594-BSP372
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372 093594-BSP372
Manufacturer: Infineon Technologies Win Source Part Number: 093594-BSP372 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.8V @ 218μA Max Gate Charge: 14.3nC @ 10V Max Input Capacitance: 329pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V Alternative Parts (Cross-Reference): PHT4NQ10LT; MMFT1N10ET3; BSP372 L6327XT; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 093594-BSP372
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 218μA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 329pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 230 mOhm @ 1.8A, 10V
Alternative Parts (Cross-Reference): PHT4NQ10LT; MMFT1N10ET3; BSP372 L6327XT;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 093594-BSP372
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 1800 milliwatts
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