Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP372 E6327 BSP372 E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 039686-BSP372 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±14V
Maximum Rds On at Id,Vgs: 310 mOhm @ 1.7A, 5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

MOSFET N-CH 100V 1.7A SOT223-4 Product overview: BSP372 E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP372 E6327 can be used for catalog matching and distributor lookup.

N-Channel 100V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4