Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP321P L6327 BSP321P L6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201414-BSP321P L6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 980mA (Tc)
Gate-Source Threshold Voltage: 4V @ 380μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 319pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 980mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Trans MOSFET P-CH 100V 0.98A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R Product overview: BSP321P L6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 0.98A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 0.98A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP321P L6327 can be used for catalog matching and distributor lookup.