Infineon Technologies AG Single FETs, MOSFETs BSP320S E6327

Description
N-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet
Description
N-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Single FETs, MOSFETs - BSP320SE6327-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP320SE6327-ND
Single FETs, MOSFETs BSP320SE6327-ND
N-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP320S E6327 - 770429-BSP320S E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP320S E6327
770429-BSP320S E6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP320S E6327 770429-BSP320S E6327
Manufacturer: Infineon Technologies Win Source Part Number: 770429-BSP320S E6327 Series: SIPMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-261-4, TO-261AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-SOT223-4 Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 20μA Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 340pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.8W (Ta) Rds On (Maximum) @ Id, Vgs: 120 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 770429-BSP320S E6327
Series: SIPMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-261-4, TO-261AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-SOT223-4
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 4V @ 20μA
Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 340pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta)
Rds On (Maximum) @ Id, Vgs: 120 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP320SE6327-ND 770429-BSP320S E6327
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP320S E6327
Polarity N-Channel
Package Type TO-261-4, TO-261AA SOT3
Transistor Grade / Operating Range Automotive
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