MOSFET P-CH 250V 430MA SOT223-4 Product overview: BSP317PE6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 430MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 430MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP317PE6327 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 864733-BSP317PE6327
Series: SIPMOS®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 250 V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Package: Reel - TR
Package: TO-261-4, TO-261AA
Mounting: Surface Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT223-4
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BSP317PE6327INTR, BSP317PE6327INCT
P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
MOSFET P-CH 250V 430MA SOT223-4
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-BSP317PE6327 | 864733-BSP317PE6327 | BSP317PE6327INTR-ND | BSP317PE6327 |
| Product Name | 250V 430MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP317PE6327 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1800 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; PG-SOT223-4 | TO-261-4, TO-261AA | TO-261-4, TO-261AA |