The BSP316P is a P-channel enhancement mode MOSFET designed for low-power switching applications. It is packaged in a PG-SOT223-4-1 surface-mount case with a continuous drain current rating of -0.68 A at 25°C and -0.54 A at 70°C. The device has a drain-source breakdown voltage of -100 V and a drain-source on-state resistance of 1.8 Ω at -10 V gate-source voltage. It supports a pulsed drain current of -2.72 A and is rated for a maximum power dissipation of 1.8 W. The gate-source voltage is ±20 V, and the operating and storage temperature range is -55°C to +150°C. It meets AEC-Q101 qualification standards and has a reverse diode dv/dt rating of 6 kV/µs. The packaging for the BSP316P is tape and reel, with 1000 pieces per reel.
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSP316PL6327 |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 100 volts |
| IDSS | 680 milliamps |
