Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP299L6327 BSP299L6327

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1027902-BSP299L6327 Termination: SMD/SMT Current Rating: 400 mA Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 400 pF Power Dissipation: 1.8 W Number of Pins: 4 Width: 6.7 mm Rise Time: 15 ns Fall Time: 15 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-223 Alternative Parts (Cross-Reference): BSP317PL6327; BSP320SL6327; BSP300L6327BSP299 L6327; BSP299-L6327; Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount, Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 500 V REACH SVHC: No SVHC Max Power Dissipation: 1.8 W Turn-On Delay Time: 8 ns Continuous Drain Current (ID): 400 mA Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 55 ns Drain to Source Resistance: 4 Ω Gate to Source Voltage (Vgs): 20 V Rds On Max: 4 Ω Dual Supply Voltage: 500 V Nominal Vgs: 3 V Threshold Voltage: 3 V
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1027902-BSP299L6327 Termination: SMD/SMT Current Rating: 400 mA Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 400 pF Power Dissipation: 1.8 W Number of Pins: 4 Width: 6.7 mm Rise Time: 15 ns Fall Time: 15 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-223 Alternative Parts (Cross-Reference): BSP317PL6327; BSP320SL6327; BSP300L6327BSP299 L6327; BSP299-L6327; Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount, Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 500 V REACH SVHC: No SVHC Max Power Dissipation: 1.8 W Turn-On Delay Time: 8 ns Continuous Drain Current (ID): 400 mA Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 55 ns Drain to Source Resistance: 4 Ω Gate to Source Voltage (Vgs): 20 V Rds On Max: 4 Ω Dual Supply Voltage: 500 V Nominal Vgs: 3 V Threshold Voltage: 3 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP299L6327 - 1027902-BSP299L6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP299L6327
1027902-BSP299L6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP299L6327 1027902-BSP299L6327
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1027902-BSP299L6327 Termination: SMD/SMT Current Rating: 400 mA Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 400 pF Power Dissipation: 1.8 W Number of Pins: 4 Width: 6.7 mm Rise Time: 15 ns Fall Time: 15 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-223 Alternative Parts (Cross-Reference): BSP317PL6327; BSP320SL6327; BSP300L6327BSP299 L6327; BSP299-L6327; Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount, Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 500 V REACH SVHC: No SVHC Max Power Dissipation: 1.8 W Turn-On Delay Time: 8 ns Continuous Drain Current (ID): 400 mA Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 55 ns Drain to Source Resistance: 4 Ω Gate to Source Voltage (Vgs): 20 V Rds On Max: 4 Ω Dual Supply Voltage: 500 V Nominal Vgs: 3 V Threshold Voltage: 3 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1027902-BSP299L6327
Termination: SMD/SMT
Current Rating: 400 mA
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Input Capacitance: 400 pF
Power Dissipation: 1.8 W
Number of Pins: 4
Width: 6.7 mm
Rise Time: 15 ns
Fall Time: 15 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-223
Alternative Parts (Cross-Reference): BSP317PL6327; BSP320SL6327; BSP300L6327BSP299 L6327; BSP299-L6327;
Popularity: Low
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount, Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 500 V
REACH SVHC: No SVHC
Max Power Dissipation: 1.8 W
Turn-On Delay Time: 8 ns
Continuous Drain Current (ID): 400 mA
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 55 ns
Drain to Source Resistance: 4 Ω
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 4 Ω
Dual Supply Voltage: 500 V
Nominal Vgs: 3 V
Threshold Voltage: 3 V

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Single FETs, MOSFETs - BSP299L6327 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSP299L6327
Single FETs, MOSFETs BSP299L6327
SMALL-SIGNAL N-CHANNEL MOSFET

SMALL-SIGNAL N-CHANNEL MOSFET

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1027902-BSP299L6327 BSP299L6327
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP299L6327 Single FETs, MOSFETs
V(BR)DSS 500 volts
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