Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1027902-BSP299L6327
Termination: SMD/SMT
Current Rating: 400 mA
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Input Capacitance: 400 pF
Power Dissipation: 1.8 W
Number of Pins: 4
Width: 6.7 mm
Rise Time: 15 ns
Fall Time: 15 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-223
Alternative Parts (Cross-Reference): BSP317PL6327; BSP320SL6327; BSP300L6327BSP299 L6327; BSP299-L6327;
Popularity: Low
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount, Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 500 V
REACH SVHC: No SVHC
Max Power Dissipation: 1.8 W
Turn-On Delay Time: 8 ns
Continuous Drain Current (ID): 400 mA
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 55 ns
Drain to Source Resistance: 4 Ω
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 4 Ω
Dual Supply Voltage: 500 V
Nominal Vgs: 3 V
Threshold Voltage: 3 V
SMALL-SIGNAL N-CHANNEL MOSFET
| Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1027902-BSP299L6327 | BSP299L6327 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP299L6327 | Single FETs, MOSFETs |
| V(BR)DSS | 500 volts |