Infineon Technologies AG Single FETs, MOSFETs BSP298 E6327

Description
N-Channel 400V 500mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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Description
N-Channel 400V 500mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote
Datasheet
Datasheet Summary
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The BSP298 is an N-channel enhancement mode MOSFET rated for 400 V drain-source voltage and 0.5 A continuous drain current, designed for surface mount applications in the PG-SOT223-4 package. It features avalanche energy capability of 130 mJ, a gate threshold voltage range of 2.1 to 4.0 V, and an on-state resistance of up to 3 Ω at 10 V gate-source voltage. The device is RoHS compliant, meets AEC-Q101 qualification standards, and operates within a junction temperature range of -55 °C to 150 °C. Thermal resistance from junction to ambient is 70 K/W.

Datasheet Summary
Powered by GS/AI

The BSP298 is an N-channel enhancement mode MOSFET rated for 400 V drain-source voltage and 0.5 A continuous drain current, designed for surface mount applications in the PG-SOT223-4 package. It features avalanche energy capability of 130 mJ, a gate threshold voltage range of 2.1 to 4.0 V, and an on-state resistance of up to 3 Ω at 10 V gate-source voltage. The device is RoHS compliant, meets AEC-Q101 qualification standards, and operates within a junction temperature range of -55 °C to 150 °C. Thermal resistance from junction to ambient is 70 K/W.

Suppliers

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Single FETs, MOSFETs - BSP298E6327-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP298E6327-ND
Single FETs, MOSFETs BSP298E6327-ND
N-Channel 400V 500mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 400V 500mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BSP298E6327-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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