MOSFET N-Ch 660mA 200V SIPMOS SOT223
MOSFET N-Ch 660mA 200V SIPMOS SOT223
MOSFET N-Ch 660mA 200V SIPMOS SOT223
MOSFET N-CH 200V 660MA SOT223-4 Product overview: BSP297H6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 660MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 660MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP297H6327XTSA1
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Manufacturer: Infineon Technologies
Win Source Part Number: 136769-BSP297H6327XT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 660mA (Ta)
Gate-Source Threshold Voltage: 1.8V @ 400μA
Max Gate Charge: 16.1nC @ 10V
Max Input Capacitance: 357pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 660mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 660MA SOT223-4
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
MOSFET N-Ch 200V 660mA SOT-223-3
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET N-CH 200V 660MA SOT223-4
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 8269272 | 8269272P | 278-BSP297H6327XTSA1 | BSP297H6327XTSA1DKR-ND | 136769-BSP297H6327XTSA1 | BSP297H6327XTSA1 | 376-BSP297H6327XTSA1 | BSP297H6327XTSA1 | 68AC4416 | BSP297H6327XTSA1 |
| Product Name | MOSFETs | MOSFETs | 200V 660MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP297H6327XTSA1 | Single FETs, MOSFETs | Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R | MOSFET | Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| Package Type | SOT223; Sot-223 | SOT223; SOT-223 | Tape & Reel (TR) | TO-261-4, TO-261AA | SOT3; PG-SOT223-4 | TO-261-4, TO-261AA | TO-3; SOT223 | Surface Mount | ||
| Number of units in IC | 1 | 1 | ||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts |
