Infineon Technologies AG Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon BSP297H6327XTSA1.

Description
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
Description
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The BSP297 is an N-channel MOSFET in a PG-SOT223 package, rated for a drain-source voltage of 200 V and a continuous drain current of 0.66 A at 25 °C. It features logic-level gate drive, a typical on-state resistance of 1.8 Ω at 10 V gate voltage, and a dv/dt rating of 6 kV/μs. The device operates within a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 qualification standards. It is RoHS compliant and halogen-free per IEC 61249-2-21. The package is supplied in tape and reel packaging with 1000 pcs per reel.

Datasheet Summary
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The BSP297 is an N-channel MOSFET in a PG-SOT223 package, rated for a drain-source voltage of 200 V and a continuous drain current of 0.66 A at 25 °C. It features logic-level gate drive, a typical on-state resistance of 1.8 Ω at 10 V gate voltage, and a dv/dt rating of 6 kV/μs. The device operates within a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 qualification standards. It is RoHS compliant and halogen-free per IEC 61249-2-21. The package is supplied in tape and reel packaging with 1000 pcs per reel.

Suppliers

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Supplier Links
Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon - 31AC8228 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon
31AC8228
Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon 31AC8228
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 31AC8228
Product Name Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon
IDSS 660 milliamps
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