Infineon Technologies AG Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon BSP297H6327XTSA1.

Description
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
  • Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon - 31AC8228 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon - 31AC8228 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon
31AC8228
Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon 31AC8228
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 31AC8228
Product Name Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon
IDSS 660 milliamps
Unlock Full Specs
to access all available technical data