The BSP297 is an N-channel MOSFET in a PG-SOT223 package, rated for a drain-source voltage of 200 V and a continuous drain current of 0.66 A at 25 °C. It features logic-level gate drive, a typical on-state resistance of 1.8 Ω at 10 V gate voltage, and a dv/dt rating of 6 kV/μs. The device operates within a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 qualification standards. It is RoHS compliant and halogen-free per IEC 61249-2-21. The package is supplied in tape and reel packaging with 1000 pcs per reel.
MOSFET, N-CH, 200V, 0.66A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 31AC8228 |
| Product Name | Mosfet, N-Ch, 200V, 0.66A, Sot-223; Channel Type Infineon |
| IDSS | 660 milliamps |
