MOSFET P-CH 60V 1.9A SOT223-4 Product overview: BSP170PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP170PH6327XTSA
MOSFET P-Ch 1.9A 60V SIPMOS SOT223
MOSFET P-Ch 1.9A 60V SIPMOS SOT223
MOSFET P-Ch 1.9A 60V SIPMOS SOT223
Manufacturer: Infineon Technologies
Win Source Part Number: 112694-BSP170PH6327X
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.9A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
MOSFET P-Ch -60V -1.9A SOT-223-3
MOSFET P-CH 60V 1.9A SOT223-4
MOSFET P-CH 60V 1.9A SOT223-4
MOSFET, P-CH, 60V, 1.9A, 150DEG C, 1.8W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSP170PH6327XTSA1 | 8269250 | 8269250P | 112694-BSP170PH6327XTSA1 | BSP170PH6327XTSA1DKR-ND | BSP170PH6327XTSA1 | BSP170PH6327XTSA1 | BSP170PH6327XTSA1 | 68AC4412 |
| Product Name | 60V 1.9A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP170PH6327XTSA1 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 1.9A, 150Deg C, 1.8W; Channel Type Infineon |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| Transconductance | 0.0013 kS | ||||||||
| PD | 1.8 milliwatts | 1800 milliwatts | 1800 milliwatts |
