Infineon Technologies AG Transistors BSP170PH6327

Description
60V 1.9A 300mΩ@10V,1.9A 1.8W 4V@250uA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS
Request a Quote
Description
60V 1.9A 300mΩ@10V,1.9A 1.8W 4V@250uA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - BSP170PH6327 - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSP170PH6327
Transistors BSP170PH6327
60V 1.9A 300mΩ@10V,1.9A 1.8W 4V@250uA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS

60V 1.9A 300mΩ@10V,1.9A 1.8W 4V@250uA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BSP170PH6327
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 67767591 - Radwell International
Fuji Electric Corp. of America
View Details
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor - T2G6003028-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Transistor Grade / Operating Range Military
View Details
3 suppliers
 - LM5100BMA/NOPB - Rochester Electronics
Texas Instruments
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
590A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D590 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details