MOSFET N-CH 200V 660MA SOT223-4 Product overview: BSP149H6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 660MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 660MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP149H6327XTSA1
Manufacturer: Infineon Technologies
Win Source Part Number: 132610-BSP149H6327XT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 660mA (Ta)
Gate-Source Threshold Voltage: 1V @ 400μA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 430pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 660mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
MOSFET N-Ch 200V 660mA SOT-223-3
MOSFET, N-CH, 200V, 0.66A, 150DEG C; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:660mA; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:-1.4V; Power Dissipation:1.8W; Product Range:-RoHS Compliant: Yes
(PRICE/TC) MOSFET, N-CH, 200V, 0.66A, 150DEG C; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:200V; CONTINUOUS DRAIN CURRENT ID:660MA; ON RESISTANCE RDS(ON):1OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:-1.4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 200V 660MA SOT223-4
MOSFET N-CH 200V 660MA SOT223-4
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-BSP149H6327XTSA1 | 132610-BSP149H6327XTSA1 | BSP149H6327XTSA1TR-ND | BSP149H6327XTSA1 | 68AC4411 | 73990048 | BSP149H6327XTSA1 | BSP149H6327XTSA1 |
| Product Name | 200V 660MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP149H6327XTSA1 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 0.66A, 150Deg C; Channel Type Infineon | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Depletion | Depletion | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||
| Transconductance | 4.00E-4 kS | |||||||
| PD | 1.8 milliwatts | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts |
