Infineon Technologies AG Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135L6906

Description
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
  • Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 - 9152-BSP135L6906 - Utmel Electronic Limited
    Utmel Electronic Limited
Description
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Suppliers

Company
Product
Description
Supplier Links
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 - 9152-BSP135L6906 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
9152-BSP135L6906
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 9152-BSP135L6906
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Supplier's Site

Technical Specifications

  Utmel Electronic Limited
Product Category Transistors
Product Number 9152-BSP135L6906
Product Name Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1443(1)-S6-AZ - 855039-2SA1443(1)-S6-AZ - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1443(1)-S6-AZ
2SA1443(1)-S6-AZ
Specs
Package Type SOT3
View Details
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die - QPD2060D - Qorvo
Qorvo
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
QPD2060D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD212902PAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR
ALD212902PAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
4 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details