Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs BSP135 E6327

Description
Win Source Part Number: 1381626-BSP135 E6327 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: SIPMOS® Package: Tape & Reel (TR) Standard Package: 1,000 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V Vgs(th) (Max) @ Id: 1V @ 94µA Power Dissipation (Max): 1.8W (Ta) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Drive Voltage (Max Rds On, Min Rds On): 0V, 10V RoHS Status: RoHS non-compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1381626-BSP135 E6327 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - BSP135E6327-ND - DigiKey
    DigiKey
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Description
Win Source Part Number: 1381626-BSP135 E6327 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: SIPMOS® Package: Tape & Reel (TR) Standard Package: 1,000 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V Vgs(th) (Max) @ Id: 1V @ 94µA Power Dissipation (Max): 1.8W (Ta) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Drive Voltage (Max Rds On, Min Rds On): 0V, 10V RoHS Status: RoHS non-compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1381626-BSP135 E6327 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1381626-BSP135 E6327
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1381626-BSP135 E6327
Win Source Part Number: 1381626-BSP135 E6327 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: SIPMOS® Package: Tape & Reel (TR) Standard Package: 1,000 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V Vgs(th) (Max) @ Id: 1V @ 94µA Power Dissipation (Max): 1.8W (Ta) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Drive Voltage (Max Rds On, Min Rds On): 0V, 10V RoHS Status: RoHS non-compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)

Win Source Part Number: 1381626-BSP135 E6327
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: SIPMOS®
Package: Tape & Reel (TR)
Standard Package: 1,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id: 1V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

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Single FETs, MOSFETs - BSP135E6327-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP135E6327-ND
Single FETs, MOSFETs BSP135E6327-ND
N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Technical Specifications

  Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 1381626-BSP135 E6327 BSP135E6327-ND
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel N-Channel
MOSFET Operating Mode Depletion
PD 1800 milliwatts
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