Infineon Technologies AG 600V 120MA MOSFET Transistor BSP135 E6327

MOSFET N-CH 600V 120MA SOT223-4 Product overview: BSP135 E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 120MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 120MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP135 E6327 can be used for catalog matching and distributor lookup.

N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Win Source Part Number: 1381626-BSP135 E6327
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: SIPMOS®
Package: Tape & Reel (TR)
Standard Package: 1,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id: 1V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)