Infineon Technologies AG MOSFET BSP129 H6327

N-channel depletion mode MOSFET in SOT-223 packaging with a drain-source breakdown voltage of 240 V, continuous drain current of 0.35 A at 25 °C, and on-state resistance of up to 6.0 Ω. The device is rated for a maximum junction temperature of 150 °C, has a gate-source voltage range of ±20 V, and is RoHS compliant and halogen-free according to IEC 61249-2-21. It meets AEC-Q101 qualification standards and features a dv/dt rating of 6 kV/µs. The package is designed for surface mounting with a thermal resistance from junction to solder point of 25 K/W.