Manufacturer: Infineon Technologies
Win Source Part Number: 100949-BSP125H6327XT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 120mA (Ta)
Gate-Source Threshold Voltage: 2.3V @ 94μA
Max Gate Charge: 6.6nC @ 10V
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 Ohm @ 120mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
MOSFET N-CH 600V 120MA SOT223-4 Product overview: BSP125H6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 120MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 120MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP125H6327XTSA1
MOSFET N-CH 600V 120MA SOT223-4
(PRICE/TC) MOSFET, N-CH, 600V, 0.12A, SOT-223; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:120MA; ON RESISTANCE RDS(ON):25OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 600V, 0.12A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET N-Ch 600V 120mA SOT-223-3
MOSFET N-CH 600V 120MA SOT223-4
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 100949-BSP125H6327XTSA1 | BSP125H6327XTSA1CT-ND | 278-BSP125H6327XTSA1 | BSP125H6327XTSA1 | 108069444 | 12AC0044 | BSP125H6327XTSA1 | BSP125H6327XTSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP125H6327XTSA1 | Single FETs, MOSFETs | 600V 120MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, N-Ch, 600V, 0.12A, Sot-223; Channel Type Infineon | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | |||||
| PD | 1800 milliwatts | 1.8 milliwatts | 1800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; PG-SOT223-4 | TO-261-4, TO-261AA | Tape & Reel (TR) | TO-261-4, TO-261AA | TO-3; SOT223 | TO-261-4, TO-261AA |
