Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP125 E6327 BSP125 E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 1024427-BSP125 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 120mA (Ta)
Gate-Source Threshold Voltage: 2.3V @ 94μA
Max Gate Charge: 6.6nC @ 10V
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 Ohm @ 120mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

MOSFET N-CH 600V 120MA SOT223-4 Product overview: BSP125 E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 120MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 120MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP125 E6327 can be used for catalog matching and distributor lookup.