Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO615N G BSO615N G

Manufacturer: Infineon Technologies
Win Source Part Number: 131863-BSO615N G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.6A
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 380pF @ 25V
Maximum Rds On at Id,Vgs: 150 mOhm @ 2.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

MOSFET 2N-CH 60V 2.6A 8SOIC Product overview: BSO615N G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSO615N G can be used for catalog matching and distributor lookup.

60V 2.6A 150mΩ@4.5V,2.6A 2W 2V@20uA 2 N-Channel SOIC-8 MOSFETs ROHS