Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO330N02K G BSO330N02K G

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965379-BSO330N02K G Packaging: Digi-Reel® Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Input Capacitance: 730 pF Power Dissipation: 2.5 W Number of Pins: 8 Rise Time: 16.8 ns Fall Time: 2.8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: No SVHC Max Power Dissipation: 1.4 W Turn-On Delay Time: 7.4 ns Continuous Drain Current (ID): 5.4 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 13.4 ns Drain to Source Resistance: 30 mΩ Gate to Source Voltage (Vgs): 12 V Rds On Max: 30 mΩ Nominal Vgs: 950 mV Threshold Voltage: 950 mV
Request a Quote
Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965379-BSO330N02K G Packaging: Digi-Reel® Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Input Capacitance: 730 pF Power Dissipation: 2.5 W Number of Pins: 8 Rise Time: 16.8 ns Fall Time: 2.8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: No SVHC Max Power Dissipation: 1.4 W Turn-On Delay Time: 7.4 ns Continuous Drain Current (ID): 5.4 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 13.4 ns Drain to Source Resistance: 30 mΩ Gate to Source Voltage (Vgs): 12 V Rds On Max: 30 mΩ Nominal Vgs: 950 mV Threshold Voltage: 950 mV
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO330N02K G - 965379-BSO330N02K G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO330N02K G
965379-BSO330N02K G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO330N02K G 965379-BSO330N02K G
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965379-BSO330N02K G Packaging: Digi-Reel® Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Input Capacitance: 730 pF Power Dissipation: 2.5 W Number of Pins: 8 Rise Time: 16.8 ns Fall Time: 2.8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: No SVHC Max Power Dissipation: 1.4 W Turn-On Delay Time: 7.4 ns Continuous Drain Current (ID): 5.4 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 13.4 ns Drain to Source Resistance: 30 mΩ Gate to Source Voltage (Vgs): 12 V Rds On Max: 30 mΩ Nominal Vgs: 950 mV Threshold Voltage: 950 mV

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 965379-BSO330N02K G
Packaging: Digi-Reel®
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance: 730 pF
Power Dissipation: 2.5 W
Number of Pins: 8
Rise Time: 16.8 ns
Fall Time: 2.8 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Max Power Dissipation: 1.4 W
Turn-On Delay Time: 7.4 ns
Continuous Drain Current (ID): 5.4 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 13.4 ns
Drain to Source Resistance: 30 mΩ
Gate to Source Voltage (Vgs): 12 V
Rds On Max: 30 mΩ
Nominal Vgs: 950 mV
Threshold Voltage: 950 mV

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 965379-BSO330N02K G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO330N02K G
V(BR)DSS 20 volts
rDS(on) 0.0300 ohms
PD 2500 milliwatts
Unlock Full Specs
to access all available technical data