Infineon Technologies AG FET, MOSFET Arrays BSO303PH

The BSO303P H is a dual P-channel MOSFET in an SO-8 package, designed for low-power switching applications. It has a drain-source voltage rating of -30 V and a continuous drain current of -8.2 A at 25°C, with a drain-source on-state resistance of 21 mΩ at -10 V gate-source voltage and 32 mΩ at -4.5 V. The device operates up to 150°C and is qualified per JEDEC for target applications. It features logic-level gate drive, halogen-free construction per IEC61249-2-21, and RoHS-compliant lead plating. Thermal resistance from junction to soldering point is 50 K/W. The part is ESD classified as HBM 1B (500V-1kV) and meets IEC climatic category 55/150/56.