Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO220N03MD G BSO220N03MD G

Manufacturer: Infineon Technologies
Win Source Part Number: 012129-BSO220N03MD G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: BSO220N03MD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 800pF @ 15V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.7A, 10V
Alternative Parts (Cross-Reference): Si4834DY-E3; SI4804bdy; Si4804BDY-T1-E3; Si4804BDY-E3;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M Product overview: BSO220N03MD G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.7A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSO220N03MD G can be used for catalog matching and distributor lookup.