Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO220N BSO220N

Manufacturer: Infineon Technologies
Win Source Part Number: 237268-BSO220N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 800pF @ 15V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 30V 6A 8DSO Product overview: BSO220N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSO220N can be used for catalog matching and distributor lookup.