Infineon Technologies AG MOSFET BSO203P H

Description
MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P
Description
MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P
Datasheet
Datasheet Summary
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BSO203P H is a dual P-channel MOSFET in a PG-DSO-8 package, designed for power switching applications. It has a drain-source voltage rating of -20 V, a continuous drain current of -8.2 A at 25 °C with V_GS = 4.5 V, and an on-state resistance of 21 mΩ max at V_GS = 4.5 V and I_D = -8.2 A. The device operates up to 150 °C and is qualified per JEDEC standard. It is RoHS compliant, halogen-free per IEC 61249-2-21, and features Super Logic Level operation rated for 2.5 V gate drive. The package measures 4.9 mm x 6.0 mm with a 1.75 mm height. ESD classification is HBM 1B (500 V - 1 kV).

Datasheet Summary
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BSO203P H is a dual P-channel MOSFET in a PG-DSO-8 package, designed for power switching applications. It has a drain-source voltage rating of -20 V, a continuous drain current of -8.2 A at 25 °C with V_GS = 4.5 V, and an on-state resistance of 21 mΩ max at V_GS = 4.5 V and I_D = -8.2 A. The device operates up to 150 °C and is qualified per JEDEC standard. It is RoHS compliant, halogen-free per IEC 61249-2-21, and features Super Logic Level operation rated for 2.5 V gate drive. The package measures 4.9 mm x 6.0 mm with a 1.75 mm height. ESD classification is HBM 1B (500 V - 1 kV).

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Sheung Wan, Hong Kong
MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P

MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSO203P H
Product Name MOSFET
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