Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO130N03MSGXUMA1 BSO130N03MSGXUMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 134748-BSO130N03MSGX UMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-DSO-8 Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 1300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 11.1A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO130N03MSGXUMA1 - 134748-BSO130N03MSGXUMA1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - BSO130N03MSGXUMA1TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSO130N03MSGXUMA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 134748-BSO130N03MSGX UMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-DSO-8 Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 1300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 11.1A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO130N03MSGXUMA1 - 134748-BSO130N03MSGXUMA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO130N03MSGXUMA1
134748-BSO130N03MSGXUMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO130N03MSGXUMA1 134748-BSO130N03MSGXUMA1
Manufacturer: Infineon Technologies Win Source Part Number: 134748-BSO130N03MSGX UMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-DSO-8 Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 1300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 11.1A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 134748-BSO130N03MSGXUMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 1300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - BSO130N03MSGXUMA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSO130N03MSGXUMA1TR-ND
Single FETs, MOSFETs BSO130N03MSGXUMA1TR-ND
N-Channel 30V 9A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8

N-Channel 30V 9A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSO130N03MSGXUMA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSO130N03MSGXUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSO130N03MSGXUMA1
MOSFET N-CH 30V 9A 8DSO

MOSFET N-CH 30V 9A 8DSO

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 134748-BSO130N03MSGXUMA1 BSO130N03MSGXUMA1TR-ND BSO130N03MSGXUMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO130N03MSGXUMA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1560 milliwatts
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