Infineon Technologies AG 30V 10A MOSFET Transistor BSO065N03MS G

Trans MOSFET N-CH Si 30V 10A 8-Pin SOP Product overview: BSO065N03MS G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSO065N03MS G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1049694-BSO065N03MS G
Packaging: Tape & Reel
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Input Capacitance: 3.1 nF
Power Dissipation: 1.56 W
Number of Pins: 8
Rise Time: 6.2 ns
Fall Time: 6.4 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Alternative Parts (Cross-Reference): FSS262-TL-E; BSO051N03MS G; FDS8896; FDS6676AS; BSO301SPNTMA1; IRF9317TRPBF; FDS8817NZBSO065N03MSG;
Popularity: Low
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 1.56 W
Turn-On Delay Time: 12.2 ns
Continuous Drain Current (ID): 13 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 15.6 ns
Drain to Source Resistance: 6.5 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 6.5 mΩ