Manufacturer: Infineon Technologies
Win Source Part Number: 1024404-BSL806NL6327
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSOP6-6
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 750mV @ 11μA
Max Gate Charge: 1.7nC @ 2.5V
Max Input Capacitance: 259pF @ 10V
Maximum Rds On at Id,Vgs: 57 mOhm @ 2.3A, 2.5V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 2.3A TSOP6-6 Product overview: BSL806NL6327HTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSL806NL6327HTSA
Mosfet Array 2 N-Channel (Dual) 20V 2.3A 500mW Surface Mount PG-TSOP6-6
MOSFET 2N-CH 20V 2.3A TSOP6-6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1024404-BSL806NL6327HTSA1 | 289-BSL806NL6327HTSA1 | BSL806NL6327HTSA1TR-ND | BSL806NL6327HTSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL806NL6327HTSA1 | 20V 2.3A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | ||
| PD | 500 milliwatts | 500 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
