MOSFET N/P-CH 30V 2.3A TSOP6-6 Product overview: BSL308CH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSL308CH6327XTSA
Mosfet Array N and P-Channel Complementary 30V 2.3A, 2A 500mW Surface Mount PG-TSOP6-6
Mosfet Array N and P-Channel Complementary 30V 2.3A, 2A 500mW Surface Mount PG-TSOP6-6
Mosfet Array N and P-Channel Complementary 30V 2.3A, 2A 500mW Surface Mount PG-TSOP6-6
Manufacturer: Infineon Technologies
Win Source Part Number: 1024392-BSL308CH6327
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 4.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSOP6-6
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.3A, 2A
Gate-Source Threshold Voltage: 2V @ 11μA
Max Gate Charge: 1.5nC @ 10V
Max Input Capacitance: 275pF @ 15V
Maximum Rds On at Id,Vgs: 57 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Infineon MOSFET BSL308CH6327XTSA1
MOSFET N/P-CH 30V 2.3A TSOP6-6
MOSFET, N&P-CH, 30V, 2.3A, TSOP; Transistor Polarity:N and P Complement; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-BSL308CH6327XTSA1 | BSL308CH6327XTSA1DKR-ND | 1024392-BSL308CH6327XTSA1 | 2144335 | 2144335P | BSL308CH6327XTSA1 | BSL308CH6327XTSA1 | 13AC8344 | 376-BSL308CH6327XTSA1 | BSL308CH6327XTSA1 |
| Product Name | 30V 2.3A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL308CH6327XTSA1 | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N&p-Ch, 30V, 2.3A, Tsop; Transistor Polarity Infineon | MOSFET N/P-CH 30V 2.3A/2A 6TSOP | FET, MOSFET Arrays |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel Complementary | |||||||
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||
| Transconductance | 0.0046 to 0.0050 kS | |||||||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts |