Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0813NDIATMA1 BSG0813NDIATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1024369-BSG0813NDIATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 155°C (TJ)
Case / Package: PG-TISON-8
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 19A, 33A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 4.5V
Max Input Capacitance: 1100pF @ 12V
Maximum Rds On at Id,Vgs: 3 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 25V 19A/33A TISON8

Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 33A 2.5W Surface Mount PG-TISON-8

MOSFET 2N-CH 25V 19A/33A TISON8

MOSFET 2N-CH 25V 19A/33A TISON8 Product overview: BSG0813NDIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 19A, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 19A, 33A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSG0813NDIATMA1 can be used for catalog matching and distributor lookup.