MOSFET 2N-CH 25V 19A/41A TISON8 Product overview: BSG0811NDATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 19A, 41A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 19A, 41A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSG0811NDATMA1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 970745-BSG0811NDATMA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 2.5W
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSG0811NDATMA1-ND,BS
Base Product Number: BSG0811
BSG0811 -Dual N-Channel OptiMOS MOSFET
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8
MOSFET 2N-CH 25V 19A/41A 8TISON
MOSFET 2N-CH 25V 19A/41A 8TISON
MOSFET 2N-CH 25V 19A/41A TISON8
MOSFET, N-CH, 25V, 50A, 150DEG C, 6.25W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:50A; On Resistance Rds(on):0.0024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
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| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-BSG0811NDATMA1 | 970745-BSG0811NDATMA1 | 2152466 | 2152467P | BSG0811NDATMA1 | BSG0811NDATMA1DKR-ND | BSG0811NDATMA1 | 376-BSG0811NDATMA1 | BSG0811NDATMA1 | 13AC8343 | BSG0811NDATMA1 |
| Product Name | 25V 19A 41A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | MOSFETs | MOSFETs | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET 2N-CH 25V 19A/41A 8TISON | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 50A, 150Deg C, 6.25W; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Asymmetrical | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| V(BR)DSS | 25 volts | 25 volts | |||||||||
| Transconductance | 0.0460 to 0.0900 kS | ||||||||||
| PD | 2.5 milliwatts | 2500 milliwatts |
