Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1
Manufacturer: Infineon Technologies
Win Source Part Number: 1024360-BSD223PH6327
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 390mA
Gate-Source Threshold Voltage: 1.2V @ 1.5μA
Max Gate Charge: 0.62nC @ 4.5V
Max Input Capacitance: 56pF @ 15V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 390mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 20V 0.39A SOT363 Product overview: BSD223PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.39A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSD223PH6327XTSA
MOSFET, P-CH, 20V, 0.39A, 150DEG C/0.25W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:390mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET 2P-CH 20V 0.39A SOT363
MOSFET 2P-CH 20V 0.39A SOT363
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSD223PH6327XTSA1TR-ND | 1024360-BSD223PH6327XTSA1 | 289-BSD223PH6327XTSA1 | 2500521P | 12AC9450 | BSD223PH6327XTSA1 | BSD223PH6327XTSA1 | BSD223PH6327XTSA1 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD223PH6327XTSA1 | 20V 0.39A MOSFET Transistor | MOSFETs | Mosfet, P-Ch, 20V, 0.39A, 150Deg C/0.25W; Channel Type Infineon | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 6-VSSOP, SC-88, SOT-363 | SOT3; PG-SOT363-6 | Tape & Reel (TR) | SOT-363 | TO-3 | 6-VSSOP, SC-88, SOT-363 | ||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 250 milliwatts | 250 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
