Manufacturer: Infineon Technologies
Win Source Part Number: 1024360-BSD223PH6327
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 390mA
Gate-Source Threshold Voltage: 1.2V @ 1.5μA
Max Gate Charge: 0.62nC @ 4.5V
Max Input Capacitance: 56pF @ 15V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 390mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1
MOSFET 2P-CH 20V 0.39A SOT363
MOSFET, P-CH, 20V, 0.39A, 150DEG C/0.25W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:390mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET 2P-CH 20V 0.39A SOT363
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1024360-BSD223PH6327XTSA1 | BSD223PH6327XTSA1TR-ND | BSD223PH6327XTSA1 | 2500521P | 12AC9450 | BSD223PH6327XTSA1 | BSD223PH6327XTSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD223PH6327XTSA1 | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFETs | Mosfet, P-Ch, 20V, 0.39A, 150Deg C/0.25W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | |||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 250 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
