Infineon Technologies AG MOSFETs BSD223PH6327XTSA1

Description
Infineon BSD223PH6327XTSA1
Request a Quote Datasheet
Description
Infineon BSD223PH6327XTSA1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2500521P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2500521P
MOSFETs 2500521P
Infineon BSD223PH6327XTSA1

Infineon BSD223PH6327XTSA1

Supplier's Site
MOSFETs - 2500520 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2500520
MOSFETs 2500520
Infineon BSD223PH6327XTSA1

Infineon BSD223PH6327XTSA1

Supplier's Site
MOSFETs - 2500521 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2500521
MOSFETs 2500521
Infineon BSD223PH6327XTSA1

Infineon BSD223PH6327XTSA1

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD223PH6327XTSA1 - 1024360-BSD223PH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD223PH6327XTSA1
1024360-BSD223PH6327XTSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD223PH6327XTSA1 1024360-BSD223PH6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1024360-BSD223PH6327 XTSA1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 390mA Gate-Source Threshold Voltage: 1.2V @ 1.5μA Max Gate Charge: 0.62nC @ 4.5V Max Input Capacitance: 56pF @ 15V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 390mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1024360-BSD223PH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 390mA
Gate-Source Threshold Voltage: 1.2V @ 1.5μA
Max Gate Charge: 0.62nC @ 4.5V
Max Input Capacitance: 56pF @ 15V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 390mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - BSD223PH6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
BSD223PH6327XTSA1
FET, MOSFET Arrays BSD223PH6327XTSA1
MOSFET 2P-CH 20V 0.39A SOT363

MOSFET 2P-CH 20V 0.39A SOT363

Supplier's Site Datasheet
FET, MOSFET Arrays - BSD223PH6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
BSD223PH6327XTSA1TR-ND
FET, MOSFET Arrays BSD223PH6327XTSA1TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1

Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1

Buy Now Datasheet
FET, MOSFET Arrays - BSD223PH6327XTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
BSD223PH6327XTSA1CT-ND
FET, MOSFET Arrays BSD223PH6327XTSA1CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1

Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1

Buy Now Datasheet
FET, MOSFET Arrays - BSD223PH6327XTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
BSD223PH6327XTSA1DKR-ND
FET, MOSFET Arrays BSD223PH6327XTSA1DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1

Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Surface Mount PG-SOT363-6-1

Buy Now Datasheet
Mosfet, P-Ch, 20V, 0.39A, 150Deg C/0.25W; Channel Type Infineon - 12AC9450 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 0.39A, 150Deg C/0.25W; Channel Type Infineon
12AC9450
Mosfet, P-Ch, 20V, 0.39A, 150Deg C/0.25W; Channel Type Infineon 12AC9450
MOSFET, P-CH, 20V, 0.39A, 150DEG C/0.25W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:390mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

MOSFET, P-CH, 20V, 0.39A, 150DEG C/0.25W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:390mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET P-Ch DPAK-2

MOSFET P-Ch DPAK-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSD223PH6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSD223PH6327XTSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSD223PH6327XTSA1
MOSFET 2P-CH 20V 0.39A SOT363

MOSFET 2P-CH 20V 0.39A SOT363

Supplier's Site

Technical Specifications

  RS Components, Ltd. Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2500521P 1024360-BSD223PH6327XTSA1 BSD223PH6327XTSA1 BSD223PH6327XTSA1TR-ND 12AC9450 BSD223PH6327XTSA1 BSD223PH6327XTSA1
Product Name MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD223PH6327XTSA1 FET, MOSFET Arrays FET, MOSFET Arrays Mosfet, P-Ch, 20V, 0.39A, 150Deg C/0.25W; Channel Type Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT-363 SOT3; PG-SOT363-6 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363 TO-3
Polarity P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 20 volts 20 volts
PD 250 milliwatts
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