Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC340N08NS3GATMA1 BSC340N08NS3GATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 127531-BSC340N08NS3G ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7A (Ta), 23A (Tc) Gate-Source Threshold Voltage: 3.5V @ 12μA Max Gate Charge: 9.1nC @ 10V Max Input Capacitance: 756pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 127531-BSC340N08NS3G ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7A (Ta), 23A (Tc) Gate-Source Threshold Voltage: 3.5V @ 12μA Max Gate Charge: 9.1nC @ 10V Max Input Capacitance: 756pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC340N08NS3GATMA1 - 127531-BSC340N08NS3GATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC340N08NS3GATMA1
127531-BSC340N08NS3GATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC340N08NS3GATMA1 127531-BSC340N08NS3GATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 127531-BSC340N08NS3G ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7A (Ta), 23A (Tc) Gate-Source Threshold Voltage: 3.5V @ 12μA Max Gate Charge: 9.1nC @ 10V Max Input Capacitance: 756pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 127531-BSC340N08NS3GATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 7A (Ta), 23A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 12μA
Max Gate Charge: 9.1nC @ 10V
Max Input Capacitance: 756pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - BSC340N08NS3GATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC340N08NS3GATMA1DKR-ND
Single FETs, MOSFETs BSC340N08NS3GATMA1DKR-ND
N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

Buy Now Datasheet
Single FETs, MOSFETs - BSC340N08NS3GATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC340N08NS3GATMA1TR-ND
Single FETs, MOSFETs BSC340N08NS3GATMA1TR-ND
N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

Buy Now Datasheet
Single FETs, MOSFETs - BSC340N08NS3GATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC340N08NS3GATMA1CT-ND
Single FETs, MOSFETs BSC340N08NS3GATMA1CT-ND
N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

Buy Now Datasheet
Singapore
80V 7A 23A MOSFET Transistor
278-BSC340N08NS3GATMA1
80V 7A 23A MOSFET Transistor 278-BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5 Product overview: BSC340N08NS3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 7A, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7A, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC340N08NS3GATM A1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 80V 7A/23A TDSON-8-5 Product overview: BSC340N08NS3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 7A, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7A, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC340N08NS3GATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC340N08NS3GATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC340N08NS3GATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5

MOSFET N-CH 80V 7A/23A TDSON-8-5

Supplier's Site
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3

MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3

Buy Now Datasheet
Mosfet, N Channel, 80V, 23A, 8Tdson; Channel Type Infineon - 47W3313 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 80V, 23A, 8Tdson; Channel Type Infineon
47W3313
Mosfet, N Channel, 80V, 23A, 8Tdson; Channel Type Infineon 47W3313
MOSFET, N CHANNEL, 80V, 23A, 8TDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

MOSFET, N CHANNEL, 80V, 23A, 8TDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R - 376-BSC340N08NS3GATMA1 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
376-BSC340N08NS3GATMA1
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R 376-BSC340N08NS3GATMA1
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R

Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R

Supplier's Site
Single FETs, MOSFETs - BSC340N08NS3GATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSC340N08NS3GATMA1
Single FETs, MOSFETs BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5

MOSFET N-CH 80V 7A/23A TDSON-8-5

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 127531-BSC340N08NS3GATMA1 BSC340N08NS3GATMA1DKR-ND 278-BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 47W3313 376-BSC340N08NS3GATMA1 BSC340N08NS3GATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC340N08NS3GATMA1 Single FETs, MOSFETs 80V 7A 23A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 80V, 23A, 8Tdson; Channel Type Infineon Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 80 volts 80 volts 80 volts
PD 2500 to 32000 milliwatts 32 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PG-TDSON-8 8-PowerTDFN Tape & Reel (TR) 8-PowerTDFN TO-3 8-PowerTDFN
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