Manufacturer: Infineon Technologies
Win Source Part Number: 127531-BSC340N08NS3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 7A (Ta), 23A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 12μA
Max Gate Charge: 9.1nC @ 10V
Max Input Capacitance: 756pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 80V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5
MOSFET N-CH 80V 7A/23A TDSON-8-5 Product overview: BSC340N08NS3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 7A, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7A, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC340N08NS3GATM
MOSFET N-CH 80V 7A/23A TDSON-8-5
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
MOSFET, N CHANNEL, 80V, 23A, 8TDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
MOSFET N-CH 80V 7A/23A TDSON-8-5
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 127531-BSC340N08NS3GATMA1 | BSC340N08NS3GATMA1DKR-ND | 278-BSC340N08NS3GATMA1 | BSC340N08NS3GATMA1 | BSC340N08NS3GATMA1 | 47W3313 | 376-BSC340N08NS3GATMA1 | BSC340N08NS3GATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC340N08NS3GATMA1 | Single FETs, MOSFETs | 80V 7A 23A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 80V, 23A, 8Tdson; Channel Type Infineon | Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | |||||
| PD | 2500 to 32000 milliwatts | 32 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PG-TDSON-8 | 8-PowerTDFN | Tape & Reel (TR) | 8-PowerTDFN | TO-3 | 8-PowerTDFN |