MOSFET N-CH 100V 6.5A/40A TDSON Product overview: BSC265N10LSFGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6.5A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 6.5A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC265N10LSFGATM
Manufacturer: Infineon Technologies
Win Source Part Number: 770414-BSC265N10LSFG
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Family Name: BSC265N10LSFG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TDSON-8
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 2.4V @ 43μA
Gate Charge (Qg) (Maximum) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1600pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 78W (Tc)
Rds On (Maximum) @ Id, Vgs: 26.5 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): FDMS36101L-F085; DMNH10H028SPS-13; DMNH10H028SPSQ-13; STL8N10LF3;
Introduction Date: July 14, 2008
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
N-Channel 100V 6.5A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 100V 6.5A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 100V 6.5A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1
MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
MOSFET N-CH 100V 6.5A/40A TDSON
MOSFET N-CH 100V 6.5A/40A TDSON
MOSFET, N-CH, 100V, 40A, 150DEG C, 78W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC265N10LSFGATMA1 | 770414-BSC265N10LSFGATMA1 | BSC265N10LSFGATMA1TR-ND | BSC265N10LSFGATMA1 | BSC265N10LSFGATMA1 | BSC265N10LSFGATMA1 | 97Y1251 |
| Product Name | 100V 6.5A 40A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC265N10LSFGATMA1 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 40A, 150Deg C, 78W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| Transconductance | 0.0210 kS | ||||||
| PD | 78 milliwatts | 78000 milliwatts | 78000 milliwatts |
