Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC265N10LSFG BSC265N10LSFG

Manufacturer: Infineon Technologies
Win Source Part Number: 039683-BSC265N10LSFG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.5A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 43μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 1600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

MOSFET N-CH 100V 40A TDSON-8 Product overview: BSC265N10LSFG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 40A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC265N10LSFG can be used for catalog matching and distributor lookup.