Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC150N03LD G BSC150N03LD G

Manufacturer: Infineon Technologies
Win Source Part Number: 133170-BSC150N03LD G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Maximum Power Dissipation: 26W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 13.2nC @ 10V
Max Input Capacitance: 1100pF @ 15V
Maximum Rds On at Id,Vgs: 15 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

MOSFETs N-Ch 30V 20A TDSON-8 OptiMOS 3 Product overview: BSC150N03LD G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC150N03LD G can be used for catalog matching and distributor lookup.