Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC12DN20NS3 G BSC12DN20NS3 G

Manufacturer: Infineon Technologies
Win Source Part Number: 770411-BSC12DN20NS3 G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Family Name: BSC12DN20NS3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TDSON-8
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 25μA
Gate Charge (Qg) (Maximum) @ Vgs: 8.7nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 680pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 5.7A, 10V
Alternative Parts (Cross-Reference): STL20NF20; Si7462DP; Si7462DP-T1; Si7462DP-T1-E3;
Introduction Date: September 01, 2010
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 200V 11.3A TDSON-8 OptiMOS 3 Product overview: BSC12DN20NS3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 11.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC12DN20NS3 G can be used for catalog matching and distributor lookup.