Manufacturer: Infineon Technologies
Win Source Part Number: 1154701-BSC109N10NS3
Family Name: BSC109N10NS3
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STL100N10F7; STL80N10WF7; DMT10H010LPS-13;
Introduction Date: March 25, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
OptiMOSTM3 Power-Transistor Product overview: BSC109N10NS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC109N10NS3G can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR, 63A I(D), 100V, 0.0109OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TDSON-8. FREE 2 YEAR RADWELL WARRANTY
100V 63A 78W 10.9mΩ@10V,46A 3.5V@45uA 1 N-Channel PDFN-8(5.2x6.2) MOSFETs ROHS
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
| Product Number | 1154701-BSC109N10NS3G | 285-BSC109N10NS3G | 223597284 | BSC109N10NS3G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC109N10NS3G | MOSFET Transistor | Transistor | Transistors |
| Package Type | SOT3 |