Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC109N10NS3G BSC109N10NS3G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1154701-BSC109N10NS3 G Family Name: BSC109N10NS3 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STL100N10F7; STL80N10WF7; DMT10H010LPS-13; Introduction Date: March 25, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1154701-BSC109N10NS3 G Family Name: BSC109N10NS3 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STL100N10F7; STL80N10WF7; DMT10H010LPS-13; Introduction Date: March 25, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC109N10NS3G - 1154701-BSC109N10NS3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC109N10NS3G
1154701-BSC109N10NS3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC109N10NS3G 1154701-BSC109N10NS3G
Manufacturer: Infineon Technologies Win Source Part Number: 1154701-BSC109N10NS3 G Family Name: BSC109N10NS3 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STL100N10F7; STL80N10WF7; DMT10H010LPS-13; Introduction Date: March 25, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154701-BSC109N10NS3G
Family Name: BSC109N10NS3
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STL100N10F7; STL80N10WF7; DMT10H010LPS-13;
Introduction Date: March 25, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now
Singapore, Singapore
MOSFET Transistor
285-BSC109N10NS3G
MOSFET Transistor 285-BSC109N10NS3G
OptiMOSTM3 Power-Transistor Product overview: BSC109N10NS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC109N10NS3G can be used for catalog matching and distributor lookup.

OptiMOSTM3 Power-Transistor Product overview: BSC109N10NS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC109N10NS3G can be used for catalog matching and distributor lookup.

Supplier's Site
Transistor - 223597284 - Radwell International
Willingboro, NJ, United States
Transistor
223597284
Transistor 223597284
POWER FIELD-EFFECT TRANSISTOR, 63A I(D), 100V, 0.0109OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TDSON-8. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 63A I(D), 100V, 0.0109OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TDSON-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Transistors BSC109N10NS3G
100V 63A 78W 10.9mΩ@10V,46A 3.5V@45uA 1 N-Channel PDFN-8(5.2x6.2) MOSFETs ROHS

100V 63A 78W 10.9mΩ@10V,46A 3.5V@45uA 1 N-Channel PDFN-8(5.2x6.2) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International ODG (Origin Data Global)
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors
Product Number 1154701-BSC109N10NS3G 285-BSC109N10NS3G 223597284 BSC109N10NS3G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC109N10NS3G MOSFET Transistor Transistor Transistors
Package Type SOT3
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