Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC105N10LSFGATMA1 BSC105N10LSFGATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 110359-BSC105N10LSFGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 11.4A (Ta), 90A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 110μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 3900pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

N-Channel 100V 11.4A (Ta), 90A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

11.4A, 100V, 0.0105ohm, N-Channel, MOSFET

MOSFET N-CH 100V 11.4/90A 8TDSON Product overview: BSC105N10LSFGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC105N10LSFGATMA1 can be used for catalog matching and distributor lookup.